Abstract
Hole traps in CdTe quantum dots embedded in ZnTe matrix grown by molecular beam epitaxy were investigated by deep level transient spectroscopy (DLTS) method and by admittance spectroscopy (AS). Both experiments reveal hole traps related to quantum dots. The DLTS measurement yields a hole trap of thermal activation energy equal to 0.16 eV and the AS reveals a trap of energy 0.1 eV.
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