Abstract
Single-mode P–p–n–N InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55 µm. The ridge waveguide structure has been designed using a finite element method, grown by metal-organic-chemical-vapor-deposition (MOCVD), and fabricated by chemical wet etching. Their phase modulation characteristics were measured by using the Fabry–Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2-mm-long device was determined to be as high as 34 deg/V·mm for the TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported thus far for InGaAsP/InP DH-type phase modulators at the said wavelength region.
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