Abstract

Atmospheric barrier–torch discharge was used for low temperature deposition of thin conductive oxide thin films on polymer substrates. An atmospheric high-density plasma jet was excited at the outlet of the quartz nozzle with an external metallic ring electrode. The RF power was capacitively connected to the plasma via a dielectric wall of the quartz tube. There was not a direct contact of the atmospheric plasma with the metallic electrode in this configuration. In x O y and SnO x transparent and conductive thin films were deposited on polymer, quartz and silicon substrates by this technique. Vapours of solid phase of In-acetylacetonate and Sn-acetylacetonate carried by nitrogen flow were used for deposition of In x O y and SnO x thin films, respectively and vapours prepared of liquid solutions of In 3-tetramethylheptanedionate in n-Oktan. Some atmospheric plasma jet parameters were determined by emission spectroscopy and by planar Langmuir probe. Deposited films were analysed by means of electron microprobe system, XRD diffraction and electrical conductivity measurement.

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