Investigation of the Interaction Between the Components in the Ti—{Si, Ge}—Sb Systems at 670 K.

Abstract

Abstract Solid-state phase equilibria in the ternary Ti{Si, Ge}Sb diagrams were determined at 670 K using experimental techniques such as X-ray powder diffraction and light optical microscopy (LOM). Limited solid solutions were measured for the binary constituent TiSi, TiGe and TiSb compounds. The phase equilibria are characterized by the existence of solid solutions starting from the binaries: Ti5Si3−xSbx and Ti5Ge3−xSbx (Mn5Si3 structure type), TiSb1−xSix and TiSb1−xGex (NiAs structure type). One ternary phase (Ti5XSb2, X = Si or Ge, W5Si3 structure type, space group I4/mcm) was observed in each of the Ti{Si, Ge}Sb systems.