Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems

Abstract

In this paper, we present recent results dealing with the influence of a high temperature anneal on the Cu–Ta interface in copper metallization systems. The electromigration lifetime data show a strong dependency of the electromigration robustness on the temperature budget. A bimodal behavior was observed after annealing the metallization at temperatures of 470 °C and above for more than 10 h. Surprisingly the high temperature anneal produces a late failure mode in electromigration lifetime tests resulting in a 10 times higher MTTF. To understand the influence of temperature pretreatment on electromigration behavior, TEM and SIMS have been performed on untreated samples (as fabricated) and on samples stored at 500 °C for 10 h. The TEM investigation shows no significant change in Cu grain size due to the high temperature. The Tof-SIMS investigations show that Ta diffuses into the Cu interconnect at the high temperature. A diffusion length for Ta of about 150 nm was observed for samples stored at 500 °C for 10 h. This effect has a strong impact on the results of the electromigration tests, done on lines after high temperature anneal.