Abstract
High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.
Highlights
The typical plasma enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon (α-Si:H) thin-film transistors (TFTs) are mainly applied for flat panel displays (FPDs), such as electronic papers (e-papers), organic light-emitting-diode displays (OLEDs), and liquid crystal displays (LCDs).Even α-Si:H TFTs have sub-threshold swing of 0.3~0.4 V/decade, off-state drain current (IDoff) below10−13 A, and on-to-off ratio about 107, they have the shortcoming of low field-effect mobility of about 0.6~0.8 cm2/V-s and poor transparency [1]
In order to achieve high performance transparent conduction oxide semiconductors (TCOs)-based TFTs or memory devices, the preparation of source and drain electrodes with a smooth surface morphology is very important because surface roughness of IGZO thin films will influence the leakage current between the semiconducting IGZO active layer and source/drain electrodes
The surface observation results suggest that the co-sputtering method is an acceptable method to deposit IGZO thin films, because all IGZO thin films have low roughness surfaces and can be used to fabricate the TCOs-based TFTs or memory devices with high performance
Summary
10−13 A, and on-to-off ratio about 107, they have the shortcoming of low field-effect mobility (μeff) of about 0.6~0.8 cm2/V-s and poor transparency [1]. To address this issue, several n-type transparent amorphous oxide semiconductors (TAOSs), which exhibit high mobility, excellent uniformity, good transparency and applicability for the low-temperature process (for polymer or plastic substrate), and have potential to serve as active layer in TFTs [2,3]. Conventional amorphous or polycrystalline transparent conduction oxide semiconductors (TCOs) have been proposed as alternative channel materials, because they exhibit excellent optical transparency and good TFTs performance in ambient conditions.
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