Abstract

In this work, the authors report a comparative study on the physical and electrical properties of n-ZnO nanowires (NWs)/p-Si and n-ZnO NWs/p-CuO film heterojunctions by employing chemical bath deposition method. Solar energy conversion efficiency of the n-ZnO NWs/p-CuO and n-ZnO NWs/p-Si heterojunctions is obtained to be 3.92% and 0.008%, respectively, under 100 mW/cm2 input incident power. Thus, the n-ZnO NWs/p-CuO heterojunctions exhibit superior photovoltaic performance in comparison to the n-ZnO NWs/p-Si system.

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