Abstract
The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100°C without deterioration of their parameters.
Highlights
ITO (Indium tin oxide, In2O3:Sn) thin films have recently gained much more attention among research teams [1,2,3,4,5,6,7], due to their unique combination of high electrical conductivity, high transmission coefficient in the visible portion of the spectrum and reflective power in IR-range. These films are extensively used in electronics and microelectronics, in transportation industry and architecture
The given paper aims to study the stability of optical and electro-physical parameters of ITO films deposited by magnetron sputtering after high temperature treatment
These results contribute to the more thorough selection of the deposition technique of ITO films further applied in design of reliable thin film heating elements
Summary
ITO (Indium tin oxide, In2O3:Sn) thin films have recently gained much more attention among research teams [1,2,3,4,5,6,7], due to their unique combination of high electrical conductivity, high transmission coefficient in the visible portion of the spectrum and reflective power in IR-range.These films are extensively used in electronics and microelectronics, in transportation industry and architecture. The given paper aims to study the stability of optical and electro-physical parameters of ITO films deposited by magnetron sputtering after high temperature treatment. After temporary exposure the surface resistance of films was measured, as well as concentration and charge carrier mobility and transmission coefficient.
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