Abstract
Tungsten oxide (WO3) thin films were produced by pulsed laser depositon and the effect of temperature on their structure studied. Characterization of PLD WO3 thin films as a function of growth temperature using X-ray diffraction (XRD) and Raman spectroscopy (RS) indicated that the films grown at room temperature were nearly stoichiometric and amorphous. The structural order improves with the increase in temperature. WO3 thin films formed at temperatures {greater than or equal to} 400 oC were non- stoichiometric with oxygen deficiency. The amorphous to polycrystalline (monoclinic) structural transition occurs at a growth temperature of 300 oC.
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