Abstract
This article presents the results of the study of the influence of the most significant parameters of the side wall roughness of an ultra-thin silicon nitride lightguide layer of multimode integrated optical waveguides with widths of 3 and 8 microns. The choice of the waveguide width was made due to the need to provide multimode operation for telecommunication wavelengths, which is necessary to ensure high integration density. Scattering in waveguide structures was measured by optical frequency domain reflectometry (OFDR) of a backscattering reflectometer. The finite difference time domain method (FDTD) was used to study the effect of roughness parameters on optical losses in fabricated waveguides, the roughness parameters that most strongly affect optical scattering were determined, and methods of its significant reduction were specified. The prospects for implementing such structures on a quartz substrate are justified.
Highlights
Silicon photonics, which is a synergy of two groups of technologies—optics and electronics—is among the most well-known technological platforms for implementing photonic integrated circuits today [1]
Multimode photonics has attracted increasing attention; the introduction of higher-level modes allows an increase in the number of channels for data transmission in systems with mode-division-multiplexed systems (MDM)
Most integrated photonics devices are designed on the basis of single-mode integrated optical waveguide structures, since higher-level modes cause crosstalk and losses because of multimode interference (MMI) [4,5]
Summary
Silicon photonics, which is a synergy of two groups of technologies—optics and electronics—is among the most well-known technological platforms for implementing photonic integrated circuits today [1]. One of the ways to implement integrated optical waveguide structures is based on SOI-technology (silicon on insulator) assuming the use of silicon as a waveguide layer and silicon oxide as a cladding [10,11] Interest in this method of implementation consisted mainly of the high contrast index for a silicon waveguide with a silicon oxide cladding (nSi = 3.46 vs nSiO2 = 1.46) and CMOS (complementary metal-oxide-semiconductor) compatibility. The use of such waveguide structures opens up a wide range of new possibilities for CMOS-compatible integrated photonics [17] This technology can be an optimal solution for manufacturing biosensors in the visible and near-infrared ranges [28,29,30], where low losses and low sensitivity to thermal changes have a crucial role.
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