Abstract
Complex investigation of the layers of porous indium phosphide (por-InP), obtained by anodic pulsed electrochemical etching of single-crystal n-InP(100) wafers (n ∼ 1018), has been performed using X-ray diffraction, IR spectroscopy, ultrasoft X-ray spectroscopy, X-ray absorption near-edge structure spectroscopy, and photoluminescence. The data obtained indicate that the surface layers of por-InP have a cluster structure and contain InP quasi-molecules.
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