Abstract
In this work, we report on the polarization effect in thallium bromide (TlBr) detectors at different operating temperatures. TlBr is a promising room-temperature semiconductor detector material due to its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm3) and wide band gap (2.68 eV). Current TlBr detectors suffer from polarization, which causes performance degradation over time when high voltage is applied. A 4.6 mm thick TlBr detector with a pixellated Au/Cr anode fabricated by Radiation Monitoring Devices, Inc. is used in the experiments. The detector has a planar cathode and nine anode pixels with 1.0 mm pitch surrounded by a guard ring. The same detector successfully operated under bias at -20°C for over a month [1]. Several experiments at -15, -10, -5, 0, 5, 10, and 15°C were carried out where the detector was under bias for four weeks at -1000 V. Measured energy resolution from a typical pixel at -5°C is 1.6% at 662 keV without any depth correction. Other spectroscopic properties such as photopeak amplitude and efficiency were studied over time.
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