Abstract
Phonon deformation potentials (PDPs) in Si1-xGex were investigated by oil-immersion Raman spectroscopy. Transverse optical (TO) and longitudinal optical (LO) phonon modes were separately excited for strained Si1-xGex as well as strained Si. PDPs p and q were derived with the use of the Raman wavenumber shifts of TO and LO. The obtained PDPs for Si, SiGe0.153, and SiGe0.297 were compared with one another. Furthermore, the strain-shift coefficient was also obtained and compared with the previously reported values. The p and q values allow us to precisely evaluate anisotropic biaxial stress states in Si and Si1-xGex by oil-immersion Raman spectroscopy.
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