Abstract
In this study, we investigated material issues that impact the applicability of Ni silicide gates to complementary-metal-oxide-semiconductor (CMOS) technologies, including the effect of dopants on the kinetics of the silicidation reaction, and the thermal stability of NiSi gates. We confirmed also that the work function of NiSi can be tuned by implanting B and As dopants, which segregate to the silicide/oxide interface.
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