Abstract
This paper investigates the mole fraction of aluminium and indium in AlxGa1−xN and InxGa1−xN semiconductor using photonic bandgap analysis. Simulation for photonic bandgap is made using finite difference time domain method (FDTD). Simulation result revealed that photonic bandgap of 1D nitride semiconductor varies linearly with respect to mole fraction. An experimental setup is also proposed to estimate above mole fraction. Aside this, energy transmitted through nitride structure is obtained using blue laser having wavelength of 507nm. Finally the simulation result showed that variation of transmitted energy with mole fraction is an excellently fitted with linearship, which leads to an accurate investigation of concentration of Al and In in nitride semiconductor.
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