Investigation of Irradiation Damage of Sic Single Crystal

Abstract

A SiC single crystal was irradiated with 1.248 MeV Ar6+ ions at a fluence of 5×1014 cm−2. X-ray diffractometry and Raman spectroscopy were employed to investigate the irradiation damage. The simulation results suggested that the damage peak was at the depth of about 700 nm, and the corresponding value was about 0.35 dpa. The XRD peak at about 35.503° was detected. It should originate from the irradiation-induced amorphous SiC. For Raman measurement, the 199, 265, 435, 540, and 659 cm−1 peaks were recorded and assigned to Si-Si vibrations. The 1415 cm−1 peak was attributed to C-C vibration. The asymmetric broadening of 786 and 963 cm−1 peaks are observed. The tails at the frequency ranges of 690-777 and 816-925 cm−1 were caused by the phonon confinement effect resulting from the irradiation-induced damage.