Abstract
Iron (II) phthalocyanine (FePc) was synthesized by adopting a focused microwave-assisted synthesis approach. Employing the synthesized FePc, a thin film Schottky device was fabricated on an indium tin oxide (ITO) coated glass substrate having a device configuration ITO/FePc/Al. The fabricated device was then exposed to gamma radiation at a dose rate of 2 Gy/h for different intervals of time. The current–voltage ( J– V) and capacitance characteristics were analyzed before and after exposure to radiation. The device shows a remarkable change in its J– V characteristics on exposure to gamma radiation, particularly for the dose range from 1 to 5 Gy . The exposure to gamma radiation causes an increase in trap density and also structural disorder. The changes in the J– V characteristics bear a linear relationship with adsorbed dose and therefore offer its application as radiation sensor.
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