Abstract
InAs/GaInPnano-heterostructures obtained by embedding 1.3 - 2.1 monolayers of InAs in the GaInP matrix lattice-matched to a GaAs substrate have been grown by the MOVPE and investigated. The formation of large nano-objects with lateral size of 150 – 200 nm, which did not depend on the InAs thickness, has been observed by TEM. The nano-objects had aheight of about 10 nm, and their shape can be described as a discontinuous quantum well. Photoluminescence (PL) analysis has shown that the position of the PL peak is practically independent on the InAs thickness and is about 940 nm. It has been supposed that the mechanism of nano-object formation differs from quantum dot deposition in the Stranski-Krastanov growth mode. Probably they are formed due to intensive As-P intermixing, and InAs acts only as nucleus for the further InGaAsP nano-object formation.
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