Abstract
The mobility of the hole defects in the dark and at irradiation by light has been investigated in halide-containing glassy matrices. The UV and ESR spectra of the holes are identical to the ones for X−2 in liquid solution. Defects move in the solid by an electron-transfer mechanism. The UV spectra of X−2 are shifted in the course of the irradiation. The reversible shift is similar to spectral diffusion in hole-burning experiments. Photoorientation of X−2 manifests itself as light-induced anisotropy of the samples. The quantum yield of the photoinduced jump of X−2 has been estimated from the kinetics of photoorientation. The energy distribution of traps has been obtained by studying the temperature dependence. Theoretical models of hole mobility are discussed. The potential surface is concluded to be characterized by both site and bond disorder. The percolation model is most adequate to rationalize the experiments.
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