Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source

Abstract

In this article, a dual-metal double-gate extended-source PNPN tunnel-FET (DG-ES-DMG TFET) is proposed and investigated. The performance of conventional double-gate PNPN TFET (DG TFET) can be improved by extending a portion of the source to the channel side, which creates vertical tunneling along with the lateral tunneling, thereby enhancing the band-to-band tunneling rate and on-current in double-gate extended-source PNPN tunnel-FET (DG-ES TFET). The performance of this DG-ES TFET can be further enhanced by introducing a dual metal gate in DG-ES-DMG TFET. The performance of the TFETs is evaluated with the help of TCAD (Technology Computer-Aided Design) software. The proposed optimized DG-ES-DMG TFET provides very good performances; On-current (I ON) of 1.39 × 10−3 A μm−1, On-Off current ratio (I ON/I OFF) of 1.10 × 1011, subthreshold swing (SS) of 20 mV/Decade, threshold voltage (V TH) of 0.37 V, and a cut-off frequency (f T) of 188 GHz. The temperature sensitivity of the TFETs is also analyzed in this work. The comparison of the proposed TFET with other existing TFETs reveals that the proposed TFET could be a good contender for low-power applications.