Abstract
We investigate the early stage of carbon nanotube (CNTs) growth on Inconel 600 to address the effect of pretreatments such as annealing and plasma pretreatment on growth behavior. In addition, we compare the growth results to other Ni-based superalloys including Invar 42 and Hastelloy C276. The growth substrates were prepared using mechanical polish, thermal annealing and plasma pretreatment. The air annealing was performed at 725 °C for 10 min and plasma pretreatment was subsequently undergone with 10.5 W at 500 °C for 30 min. The annealed and plasma-pretreated substrates exhibited different surface morphologies on the surface and enhanced growth behavior of CNT was observed from the region of particulate surface. The optimized growth temperature, which produces the highest CNT height, was determined at 525 °C for Ni and Inconel 600 and 625 °C for Invar 42 and Hastelloy C276 substrates. The difference of optimal growth temperature is expected to the existence of high temperature elements such as Mn or Mo in the alloys. X-ray diffraction spectroscopy revealed that the formation of roughened oxide layers caused by the pretreatments would promote the nucleation and growth of the CNTs.
Highlights
Carbon nanotubes (CNT) are attractive materials since they have extraordinary physical, chemical and electrical properties [1]
The growth temperature was fixed at 525 ◦C when we investigated the effect of plasma power on CNT growth
In order to address the effect of substrate pretreatments on CNT growth, we investigated the early stage of CNTs growth on Inconel 600 and compared the growth results to other Ni-based superalloys such as Invar 42 and Hastelloy C276
Summary
Carbon nanotubes (CNT) are attractive materials since they have extraordinary physical, chemical and electrical properties [1]. Among the various growth techniques, a chemical vapor deposition (CVD) has been widely employed to grow CNTs because of its relatively easy accessibility and simple operation. It has been known the vapor-liquid-solid mechanism can be applicable as a growth mechanism of CNTs in a CVD. The thickness of the buffer layers must be controlled from the viewpoint of directional conductivity from CNTs to substrates which are used as, especially, charge paths in some applications. In spite of the above-mentioned efforts, further investigations, especially in early stage of CNT growth, are still required to understand the growth behaviors on various metallic substrates which accelerate the realization of industrial applications. It is found that the optimized pretreatment involves the formation of roughened oxide surface, which would promote the nucleation and growth of the CNTs
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