Abstract
The kinetics and the mechanism of dissolution of fresh and illuminated chalcogenide layers from the Ge-Sb-S system have been investigated by the turn-table method. The relative roles of surface chemical reaction and diffusion in the heterogeneous dissolution process vs the layer composition have been established. Addition of a surface active substance (SAS) with cation-active organic nitrogen group to the alkaline solvent changes the dissolution kinetics. The selective influence of SAS at the topological phase transition of the structure allows to control the process of dissolution of the chalcogenide films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
