Abstract
Abstract Experimentally measured cross sections are presented for the natCu(α, xn)66,67,68Ga and 68Zn(p, xn)67,68Ga nuclear processes up to 36 and 20 MeV, respectively. Based on these results and the reliable cross section data available in the literature, the possible thick target yields were also calculated. Two different 68Ga production routes (Cu+α and Zn+p) are discussed in detail, especially with regard to the 66Ga and 67Ga contamination levels as a function of the target enrichment level and the incident bombarding energies. Both processes can be used for in-house 68Ga production with low (<1%) 66Ga and/or 67Ga EOB contamination using enriched 68Zn (>80%) or 65Cu (>95%) target. The maximum available yield on 100% enriched 68Zn and 65Cu (irradiation time: 2.25 h; bombarding energy: Ep=20 MeV and E α =18 MeV) is 352.45 mCi/μA (13.04 GBq/μA) and 14.28 mCi/μA (528.36 MBq/μA), respectively.
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