Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO2/SiO2/p-Si/Al

Abstract

In this paper, we synthesized a novel structure of Au/CNTs/TiO2/SiO2/p-Si/Al that hasn’t been explored before. The real and imaginary parts of impedance, as well as Cole-Cole diagrams, have positive and negative values with varying temperatures, frequencies, and voltages. The real and imaginary parts of the electric modulus show the same behavior, with peaks appearing for all temperatures and voltage of V = −2 V and V = −1 V, while two peaks exist at all temperatures for the imaginary modulus part (M″) at V = 0 V and V = 1 V, the values of M′ is seen higher than M″. The Cole-Cole diagram of M″ with M′ has shown one semicircle and two semicircles at the same mentioned voltages. The oxide layer thickness (dox), the density distribution (Nss), the maximum admittance (Ym), the maximum electric field (Em), the depletion layer width (Wd), and ΔΦb (eV) were examined by the relationship. As the frequency increases, the Φb(C−V) increases, while the concentration of donor atoms (ND) decreases. The surface states (Nss) voltage-dependent profile was calculated and evaluated.