Abstract
Barium stannate titanate Ba(Sn 0.15 Ti 0.85 )O 3 (BTS) thin films have been investigated as a prospective material for tunable microwave applications. The thin films were fabricated by sol-gel method on (100) MgAl 2 O 4 single-crystal substrates. The influence of post-annealing on the structure and tunable dielectric properties of the thin films was studied. Using interdigital capacitors with Au electrodes on thin films, the dielectric constant and loss tangent were measured as a function of electric filed and temperature at 1 MHz. A tunability of 28.86% at E max = 80 kV/cm and a loss tangent of 0.016 have been achieved for the sample annealed at 1000°C, measured at 1 MHz and room temperature. In addition, BTS films were also characterized at microwave frequencies up to 10 GHz. A capacitance change of 15.19% was observed at the frequency of 5 GHz with an applied electric field of 80 kV/cm.
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