Abstract
Recently, thermoelectric thin films have been gaining attention as potential thermoelectric generators that can be used to power external devices. Such films can recover electrical energy from waste heat and are environmentally friendly. Micro fabrication of thin films is achieved by sputtering on silicon films. In this study, the sputtering of Bismuth Telluride (N-type, P-type) films was investigated. Research has verified the efficiency of Bismuth Telluride films, but little is known about how the sputtering process affects the film's quality. Thus, the focus of this study explores how sputtering parameters of discontinuous sputtering intervals, exposure to normal atmospheric conditions and in situ annealing affect the thickness, thermoelectric properties, and microstructure of films. This will bring about a better understanding of the relationship between the sputtering process and the properties of the produced film for both N and P type materials. Recommendations based on this study can contribute to the production of more efficient thin films suitable for energy harvest application.
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