Abstract
Abstract Efficient green fluorescent and phosphorescent inverted organic light emitting devices (IOLEDs) with a non-doped charge generation unit (CGU) of NPB/MoO3/Al/LiF as an electron injector have been developed. It is found that the electrons are generated effectively at the NPB/MoO3 interface and injected from MoO3 to the electron transporting layer via assistant electron injection layers of Al/LiF. More importantly, the performance of the devices shows insensitivity to the work function of the used cathode. Under the optimal structure of NPB(10 nm)/MoO3(5 nm)/Al(3 nm)/LiF(1 nm), the green fluorescent IOLEDs present a maximum current efficiency (CEmax) of 3.5 cd/A. Furthermore, the green phosphorescent IOLEDs based on this CGU show a turn-on voltage of 3.8 V, a CEmax of 54.6 cd/A and a maximum external quantum efficiency of 15.8%. The results suggest that the introduction of non-doped CGU in IOLEDs provides a promising strategy to integrate IOLEDs with the n-channel thin film transistors for applications in active-matrix OLEDs.
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