Abstract
We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in a nominally symmetric Si (001)/Ag/CoFe/AlOx/CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions with inverse TMR shows a thin, discontinuous Fe3O4 layer at the CoFe/AlOx interfaces. The Fe L2,3 edge core level shifts are also consistent with those of Fe3O4. We find no Fe3O4 layer in junctions with normal TMR. We believe this Fe3O4 layer is responsible for the inverse TMR.
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