Abstract
We show that the antisymmetric planar Hall effect in Fe andFe3Si layers grown on GaAs(113)A substrates and the symmetric intrinsic planar Hall effect inFe3Si on GaAs(001) are closely related to each other. These effects appear in conjunction withadditional contributions to the anomalous Hall effect, which reflect the magneticfield-induced crystalline anisotropy upon atomic ordering of the crystal. In the context ofrecent theoretical studies based on the Berry phase and the spin chirality, weexplain the behaviour of the planar Hall effect with a microscopic model thattakes into account dynamic non-coplanar spin configurations. We analyse suchnon-coplanar spin configurations, which are in accordance with the symmetry of theinvestigated systems, and find a good correspondence with experimental results.
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