Abstract
Composition and size dependent band gap engineering with longer excited state charge carrier lifetime assist CdSxSe1–x alloy semiconductor quantum dots (QDs) as a promising candidate for quantum dot solar cell (QDSC). Colloidal CdSxSe1–x alloy QDs were synthesized using the hot injection method where a stoichiometric mixture of S-TOP and Se-TOP were injected at 270 °C in a mixture of Cd-oleate. The electron decoupled from hole in the alloyed structure due to delocalization of electron in electronically quasi type-II graded CdSxSe1–x alloyed structure. As a result, intraband electron cooling time increases from 100s of fs to sub 10 ps time scale in the alloyed graded structure. Extremely slow electron cooling time (∼8 ps) and less charge recombination (∼50% in >2 ns) as compared to both CdS and CdSe QDs are found to be beneficial for charge carrier extraction in QD solar cells. Using polysulfide electrolyte and Cu2S-deposited ITO glass plates as photocathode, the efficiency of the QD solar cell was measure...
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