Abstract
Intersubband resonance excitations in metal-oxide-silicon (MOS) systems with periodic lateral charge density modulations have been investigated. The charge density is N s1 in the region t 1 and N s2 for the rest t 2= a− t 1 of the period. Periodicities are typically a≈500 nm. We will discuss in how far the intersubband resonance is governed by the local properties in the regions t i ( i=1, 2) or influenced by the microstructure.
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