Abstract
The intersubband absorption of the four-energy-level system in strained AlGaN/GaN double quantum wells is calculated by considering the polarization effect and the strain modification on material parameters (e.g., the conduction band offset, the electron effective mass and the static dielectric constant). It is found that the electron wavefunctions mainly locate at the left well and penetrate into the left barrier. The absorption spectrum exhibits multiple peaks contributed by different transitions. The position and height of absorption peaks are not very sensitive to the structural parameters (i.e., composition and thickness) of the central barrier because of the strong built-in electric field. However, the coupling between two wells can be enhanced by strain modulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
