Abstract
The fast cooling rate of rapid thermal annealing is responsible for the occurrence of supersaturated solutions of transition metals in silicon within specific annealing conditions. The generation and evolution of an interstitial chromium solution in Czochralski-grown silicon, after rapid thermal annealing, have been studied by means of deep level transient spectroscopy. Low temperature annealings have been carried out in order to monitor the decay of the interstitial chromium solution induced by rapid thermal annealing in chromium-diffused samples. The apparent dependence of the interstitial chromium concentration on the temperature plateau parameters, can thus be explained by taking into account precipitation phenomena occurring during the final stage of cooling down.
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