Abstract
The results of experimental studies of interphase interactions in TiBx-n-GaAs (GaP, InP, 6H-SiC) contacts stimulated by external effects are described. These effects are rapid thermal annealing at temperatures as high as 1000°C, microwave treatment at f=2.5 GHz, and 60Co γ radiation in the range of doses 105–107 rad. Possible thermal and athermal relaxation mechanisms of internal stresses are considered. It is shown that thermally stable TiBx-n-GaAs (GaP, InP, 6H-SiC) interfaces can be formed.
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