Abstract
Internal photoemission phototransport measurements revealed 0.27±0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si—GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs substrate.
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