Abstract
A small aperture, fine pitch, and high aspect ratio have been the characteristics of through silicon via (TSV) 3D packaging technology. Thus, the requirements of TSV quality are becoming higher and higher. In order to improve the reliability of TSV 3D packaging, it is necessary to find an effective method to discover the internal defect of TSVs. Based on the view that intact TSVs and defective ones will exhibit different external features under thermal–electric coupling excitation, an internal defect inspection method through identifying the external feature pattern is proposed. The simulation result shows a significant difference in the temperature distribution between intact TSVs and those with some typical defects. By contrast, the differences between the intact TSV and the TSV with gaps, bottom cavity, or filling deletion are 1, 2.11, and 6.83 °C, respectively. Then, the experiment is carried out, and the defect is recognized via external temperature characteristics caused by the internal defects of TSVs. The good agreement between experimental validation and simulation results shows that the proposed method is feasible for TSV internal defect detection applications.
Highlights
To meet the requirements of modern integrated circuit product packaging, three-dimensional (3D) packaging technology has been developed
The results show that by obtaining the temperature distribution of internal defects in the through silicon via (TSV), the defects can be effectively identified
According to the overall structure of the TSV 3D package, as shown in Fig. 2, it shows that the communication and energy transfer between the chip and the substrate are mainly established through TSVs and other structural units
Summary
To meet the requirements of modern integrated circuit product packaging, three-dimensional (3D) packaging technology has been developed. Because small apertures, high density, and high aspect ratio are the development trends of its technology, the scale effect is more obvious; the stress mismatch is more serious; and defects such as TSV bottom cavity, containing gap, and filling deletion are more likely to occur The existence of these defects will lead to a series of problems such as unstable package performance and reduced product reliability.. The results obtained from the simulation are superior in terms of area, line length, delay, run time, and temperature.12 It provides a new idea for the internal defect detection of TSVs. Aiming at the shortcomings of traditional inspection methods, this paper analyzes the internal defect mechanism of the TSV 3D package based on thermal conduction theory, establishes a simulation model of the TSV 3D package structure, and obtains temperature distribution under different defect forms. This detection method can distinguish and locate defects while ensuring the accuracy of detection and can improve the detection efficiency
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