Abstract
Breakdown homogeneity and triggering of bipolar transistor action are studied in Smart Power technology ESD protection devices via measurements of temperature distribution and thermal dynamics by a laser interferometric technique. Temperature changes in the devices biased in the avalanche multiplication or snapback region are monitored by ns-time scale measurements of the optical phase shift. The distribution of the temperature-induced phase shift is correlated with the position of ESD damage obtained by backside IR microscopy.
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