Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic

Abstract

Switching behavior in Nd0.7Sr0.3MnO3 ceramic is investigated widely due to its close association with the new storage Resistive random access memory. In this work, we discuss the transport characteristic of the electrode-bulk interface and boundary/phase interface, and explain the differences between the two interfaces. Firstly, the Nd0.7Sr0.3MnO3 ceramic samples are prepared by solid-phase reaction and high-energy milling methods, respectively. And the transport properties of the two interfaces are investigated respectively by the two-line and four-line measurements. The results show that the Ag electrode-bulk interfaces exhibit nonlinear and hysteretic I-V characteristics and a stable resistance switching effect, and the stability of resistance switching behavior is reduced gradually with the increase of temperature. For the boundaries/phase interfaces, however, it does not exhibit resistance switching effect, although a nonlinear and hysteretic I-V behavior can also be observed under the four-line measurement mode. Various defects in the two interfaces act as traps and regulate the interfacial transports and result in the nonlinear and hysteretic I-V behaviors in the two interfaces. Additionally, the simulation experiments reveal that a large number of boundaries/phase interfaces and larger leakage conductance resulting from the complex connections of boundaries/phase interfaces are the main responsibilities for the fact that the boundaries/(phase) interfaces do not exhibit EPIR behavior as the electrode-bulk interface.