Abstract
The effect of H and Cl on the interfacial silicon emission has been investigated by the simulation of dry oxidation with the addition of small amounts (≤ 10%) of water (H2O) and chlorine (Cl2). The simulation results for the oxide thickness indicate that the interfacial silicon emission rate is decreased and the equilibrium concentration of the oxygen in the oxide is increased by the addition of these species, as expected from the interfacial Si emission model. From these results, we show that the model is effective for describing oxidation processes.
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