Abstract
ABSTRACTInterfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and auto–correlation function analysis. For samples with nominal atomic ratios Mo:Si = 1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si = 1:2 samples after annealing at 650 °C for 1 h.Multiphases were observed to form simultaneously in samples annealed at 400–500 °C. After 650 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si = 1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si = 3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period and annealing conditions. The results are interpreted in terms of the delicate balance between intermixing of constituent atoms and silicide formation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.