Abstract
We have investigated the mechanism of Zr silicidation from ZrO2/Si gate-stack structure in ultralarge-scaled-integration devices by high-resolution core-level photoemission spectroscopy with annealing-temperature controlling. We have found that the interfacial SiO2 layer thickness is tunable by controlling the annealing temperature and the silicidation occurs in the narrow annealing-temperature ranges. New method by combinatorial annealing system enables to control the narrow-range annealing temperature for the observation of the silicidation processes and to discuss the silicidation chemical reaction thermodynamically based on the annealing-temperature dependence in core-level photoemission spectra. [DOI: 10.1380/ejssnt.2006.263]
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