Abstract
The temperature and field dependent leakage current in HfO2/SiO2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (ϕt) and activation energy (Ea) increase for chemically grown IL devices. The trap level energy, (ϕt) ∼ 0.2 eV, indicates that doubly charged oxygen vacancies (V2−) are the active electron traps which contribute to the leakage current in these gate stacks.
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