Abstract
A novel efficient method to feature the electromagnetic–thermal distribution at the dielectric interface is proposed for through-silicon vias (SPTSVs) using the recursive approximation algorithm. Considering the proximity and eddy current effects, the ultra-broadband interface admittance and electrical coupling models up to 300 GHz are presented based on a two-dimensional time-varying field and transient polarization mechanism. Collaborative finite element analysis shows that the results of the proposed model highly agree with those of the experiments and the three-dimensional full-wave simulation (HFSS 14.0 and Maxwell v16) up to the millimeter wave band. Then, the relaxation properties and interface electrical characteristics for SPTSVs are deeply characterized with different physical parameters. Finally, the dielectric loss and frequency response of SPTSVs are revealed. The proposed method can accurately evaluate the electromagnetic–thermal characteristics for the SPTSV interface at different metal–oxide–semiconductor (MOS) bias states.
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