Interfacial chemical bonds and sulfur vacancies synergistically modulated charge transfer in ZnIn2S4/MoO2-C Ohmic-junction photocatalyst for efficient hydrogen evolution

Abstract

The construction of an Ohmic contact with a strong built-in electric field is crucial for the photocatalytic hydrogen evolution performance. However, consciously modulating Ohmic contacts to facilitate charge transfer remains very difficult. Herein, a sulfur vacancies-rich ZnIn2S4/MoO2-C Ohmic contact structure was synthesized by solvothermal method. Experimental results and DFT calculations indicated that the structure of MoO2-C changes under high temperature and pressure conditions, leading to the formation of interfacial Mo-S bonds with sulfur-vacancy-rich ZnIn2S4 in close contact. Importantly, the electronic structure of the Ohmic junction was synergistically modulated by interfacial chemical bonds and sulfur vacancies, creating a strong built-in electric field that effectively facilitated charge transfer and exciton dissociation at the interface. The optimized ZnIn2S4/MoO2-C composite exhibited a photocatalytic hydrogen evolution rate of 59.9 µmol h−1, which was 12 times and 4.7 times higher than that of ZnIn2S4 without sulfur vacancies and with sulfur vacancies, respectively. This work presented a novel method of synergistically modulating charge transfer in Ohmic junctions, promising improved photocatalytic performance.