Abstract
The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I–V–T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomogeneity provided a good description of the charge transport at the interface of all the samples. Based on XPS analysis, the removal of native oxide occurred due to a self-cleaning effect via the ALD process, especially for the thicker Al2O3 layer. The significant diffusion of In into the Al2O3 of the thinner layer may have formed In2O3 and degraded the Al2O3 film. XPS analysis also showed that with increasing Al2O3 thickness, emission from In2O3 decreased while that from InPO4 increased.
Highlights
To overcome the limitations of Si-based technology, alternative materials such as high-mobilityIII-V compound semiconductors have been considered for future n-channel metal-oxide-field-effect transistors (MOSFETs).[1,2,3] Among III-V semiconductors, InP is a good candidate because of its high mobility, relatively high band gap, and good insulating properties.[3]
Experiments to measure electrical and physical characteristics have shown that atomic layer deposition (ALD) of Al2O3 on InGaAs provides better interface quality than does HfO2.5 further investigation regarding the properties of the oxide/InP interface is required
100-nm-thick Al metal was deposited using e-beam evaporation over the entire back surface of the samples and the samples were attached to copper plates by rubbing with In metal (hereafter denoted as the Au/InP, Au/Al2O3(0.7), and Au/Al2O3(2.7)/InP junctions)
Summary
To overcome the limitations of Si-based technology, alternative materials such as high-mobility. III-V compound semiconductors have been considered for future n-channel metal-oxide-field-effect transistors (MOSFETs).[1,2,3] Among III-V semiconductors, InP is a good candidate because of its high mobility, relatively high band gap, and good insulating properties.[3] InP has been investigated as a barrier layer between an InGaAs channel and a high-k dielectric layer;[4] despite this progress, the high defect density between the III-V semiconductor and the high-k dielectric layer has limited development of III-V channel MOSFETs.[3] Significant research has been conducted to elucidate the characteristics of dielectric/III-V semiconductor interfaces;[2,5] for example, the magnitude of the extracted interface trap density of an Al2O3/InP interface has been found to be higher than that of an HfO2/InP interface.[2] Experiments to measure electrical and physical characteristics have shown that atomic layer deposition (ALD) of Al2O3 on InGaAs provides better interface quality than does HfO2.5 further investigation regarding the properties of the oxide/InP interface is required. We investigated the electrical and interfacial properties of Au/Al2O3/InP junctions after depositing a very thin Al2O3 layer on n-InP
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