Interface Trap State Characterization of Metal-Insulator-Semiconductor Structures Based on Photosensitive Organic Materials

Abstract

Flexible organic and printed electronics has led in the last years to exciting applications, especially for what concerns devices incorporating photosensitive materials. Among the latter, organic field-effect phototransistors are a promising technology because of the high light-sensitivity and the possibility of being integrated within more complex systems. Nevertheless, their optimization has not been thoroughly investigated and considerable variations are often observed in their behavior. In this framework, the most critical aspect is represented by the interface formed between the organic semiconductor and the employed dielectric layer. In our contribution, we have fabricated metal-insulator-semiconductor (MIS) structures based on the archetypal photosensitive organic materials poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PC61BM) on Silicon/SiO2 substrates, exploiting their blend in a bulk heterojunction configuration. The MIS structures have been characterized by means of admittance spectroscopy to study the properties of the trap distribution at the interface between the organic semiconductors and the silicon oxide insulating layer. The complex behavior of the capacitance and loss diagrams has been interpreted with a simple electrical model to extract the density of the traps at the interface between the insulator and the semiconductor. It is shown that in the blend-based MIS device several peaks arise in the loss diagram with respect to the only P3HT MIS device. This could be attributed to a different interaction between the single species in the bulk heterojunction and the silicon oxide layer. Furthermore, the reported values of trap densities result in the range of those determined for analogous structures and materials.