Abstract
This work offers a comprehensive analysis of the adverse impact of interface trap charge (ITC) under the influence of temperature variation on a heterostacked (HS) source L-gate tunnel field effect transistor (TFET) having a SiGe pocket. An investigation of both static and radiofrequency (RF) characteristics has been carried out. It appears that ITCs situated at the Si–oxide interface fluctuate the flat-band voltage to alter the various analog/RF parameter characteristics. Uniform ITCs are seen to be less susceptible to degradation in device characteristics. Low-frequency noise (LFN) analysis has also been carried out considering the impact of different trap distributions (uniform and Gaussian) and densities, which are compared. The temperature dependence of LFN has been studied under the influence of different distributed ITCs, and this has rarely been explored. Moreover, a comparative analysis has been made of the device behavior and LFN characteristics of HS L-gate TFET structures with and without a SiGe pocket. Structures with SiGe pockets were found not to be susceptible to noise effects.
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