Abstract
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6rt(3)x6rt(3)-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).
Highlights
Production of epitaxial graphene on SiC{0001} is being actively pursued by many research groups because of the potential application of graphene for novel electronic devices.[1]
For formation in vacuum, we observe a 3×3 interface structure, in agreement with that seen by many other groups.[1,3,5]
When the graphene is formed in a Si-rich environment, produced either by ≈10-4 Torr of disilane or using 1 atm of purified neon, we observe a C-rich interface layer with structure √43×√43-R±7.6°
Summary
Production of epitaxial graphene on SiC{0001} is being actively pursued by many research groups because of the potential application of graphene for novel electronic devices.[1].
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