Abstract
We investigated the distribution of tunneling current through ultrathin oxide films on Si(111) with an atomic force microscope having a conductive tip. We observed enhancement of the tunneling current at step edges for the oxide grown in dry O 2 at 600°C, while the oxide grown in NHO 3 showed only small contrast over the surface. With analysis of the current–voltage characteristics, the tunneling current enhancement could reflect the interface states at the step edges.
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