Abstract
Confined excitons in non-abrupt GaAs/Al x Ga 1− x As single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning α with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al 0.3Ga 0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.
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